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? semiconductor components industries, llc, 2001 february, 2001 rev. 0 1 publication order number: ncp4555/d ncp4555, ncp4586 100 ma and 150 ma cmos ldos with shutdown and error output the ncp4555 and ncp4586 are high accuracy (typically 0.5%) cmos upgrades for older (bipolar) low dropout regulators. designed specifically for batteryoperated systems, the devices' cmos construction eliminates wasted ground current, significantly extending battery life. total supply current is typically 50 m a at full load (20 to 60 times lower than in bipolar regulators). the devices' key features include ultra low noise operation, very low dropout voltage typically 180 mv (ncp4555) and 270 mv (ncp4586) at full load and fast response to step changes in load. an error output (error ) is asserted when the devices are outofregulation (due to a low input voltage or excessive output current). error can be used as a low battery warning or as a processor reset signal (with the addition of an external rc network). supply current is reduced to 0.5 m a (max) and both v out and error are disabled when the shutdown input is low. the devices incorporate both overtemperature and overcurrent protection. the ncp4555 and ncp4586 are stable with an output capacitor of only 1.0 m f and have a maximum output current of 100 ma and 150 ma, respectively. for higher output current regulators, please see the ncp4569 (i out = 300 ma) data sheet. features ? zero ground current for longer battery life ? very low dropout voltage ? guaranteed 100 ma and 150 ma output (ncp4555 and ncp4586 respectively) ? high output voltage accuracy ? standard or custom output voltages ? powersaving shutdown mode ? error output can be used as a low battery detector, or processor reset generator ? overcurrent and overtemperature protection ? spacesaving 5pin sot23a package ? pin compatible upgrades for bipolar regulators applications ? batteryoperated systems ? portable computers ? medical instruments ? instrumentation ? cellular/gsms/phs phones ? linear postregulators for smps ? pagers http://onsemi.com sot23 sn suffix case 1212 1 pin connections 2 3 4 5 see detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet. ordering information see general marking information in the device marking section on page 11 of this data sheet. device marking information 5 1 2 4 3 v in error gnd shdn v out (top view)
ncp4555, ncp4586 http://onsemi.com 2 figure 1. typical application ncp4555 ncp4586 1 2 3 5 4 v in gnd shdn error v out error v out + 1 m f v in 1 m shutdown control (from power control logic) absolute maximum ratings* rating symbol value unit input voltage 6.5 v output voltage 0.3 to v in + 0.3 v power dissipation internally limited operating temperature range t a 40 t j 125 c storage temperature t stg 65 to +150 c maximum voltage on any pin v in + 0.3 to 0.3 v lead temperature (soldering, 10 sec.) +260 c esd withstand voltage human body model (note 1.) v esd 2000 v latchup performance (note 2.) positive negative i latchup 250 500 ma *stresses above those listed under aabsolute maximum ratings'' may cause permanent damage to the device. these are stress ratin gs only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. 1. tested to eia/jesd22a114a 2. tested to eia/jesd78
ncp4555, ncp4586 http://onsemi.com 3 electrical characteristics (v in = v out + 1.0 v, i l = 100 m a, c l = 3.3 m f, shdn v ih , t a = 25 c, unless otherwise noted. boldface type specifications apply for junction temperatures of 40 c to +125 c.) characteristics test conditions symbol min typ max unit input operating voltage v in 6.0 v maximum output current ncp4555 ncp4586 i outmax 100 150 ma output voltage note 3. v out v r 2.5% v r 0.5% v r + 2.5% v v out temperature coefficient note 4. tcv out 20 40 ppm/ c line regulation (v r + 1.0 v) v in 6.0 v v out / v in 0.05 0.35 % load regulation ncp4555 ncp4586 i l = 0.1 ma to i outmax i l = 0.1 ma to i outmax note 5. v out /v out 0.5 0.5 2.0 3.0 % dropout voltage ncp4555, ncp4586 ncp4586 i l = 100 m a i l = 20 ma i l = 50 ma i l = 100 ma i l = 150 ma note 6. v in v out 2.0 65 85 180 270 120 250 400 mv supply current (note 10.) shdn = v ih , i l = 0 i in 50 80 m a shutdown supply current shdn = 0 v i insd 0.05 0.5 m a power supply rejection ratio f re 1.0 khz psrr 64 db output short circuit current v out = 0 v i outsc 300 450 ma thermal regulation notes 7., 8. v out / p d 0.04 v/w thermal shutdown die temperature t sd 160 c thermal shutdown hysteresis t sd 10 c output noise i l = i outmax 470 pf from bypass to gnd en 260 nv hz
shdn input shdn input high threshold v in = 2.5 v to 6.5 v v ih 45 %v in shdn input low threshold v in = 2.5 v to 6.5 v v il 15 %v in error output minimum v in operating voltage v inmin 1.0 v output logic low voltage 1.0 ma flows to error v ol 400 mv error threshold voltage see figure 3 v th 0.95 x v r v error positive hysteresis note 9. v hys 50 mv (v outmax v outmin ) 10 6 v out t 3. v r is the regulator output voltage setting. for example: v r = 2.5 v, 2.7 v, 2.85 v, 3.0 v, 3.3 v, 3.6 v, 4.0 v, 5.0 v. 4. t c v out = 5. regulation is measured at a constant junction temperature using low duty cycle pulse testing. load regulation is tested over a load range from 0.1 ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the therma l regulation specification. 6. dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. 7. thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, exc luding load or line regulation effects. specifications are for a current pulse equal to i lmax at v in = 6.0 v for t = 10 msec. 8. the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature, and the thermal resistance from junctiontoair (i.e. t a , t j , ja ). exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. please see thermal considerations section of this data sheet for more details. 9. hysteresis voltage is referenced by v r . 10. apply for junction temperatures of 40 c to +85 c.
ncp4555, ncp4586 http://onsemi.com 4 pin description pin number symbol description 1 v in unregulated supply input. 2 gnd ground terminal. 3 shdn shutdown control input. the regulator is fully enabled when a logic high is applied to this input. the regulator enters shutdown when a logic low is applied to this input. during shutdown, output voltage falls to zero, error is open circuited and supply current is reduced to 0.5 m a (max). 4 error outofregulation flag. (open drain output). this output goes low when v out is outoftolerance by approximately 5.0%. 5 v out regulated voltage output. detailed description the ncp4555 and ncp4586 are precision fixed output voltage regulators. unlike bipolar regulators, the ncp4555 and ncp4586 supply current does not increase with load current. in addition, v out remains stable and within regulation at very low load currents (an important consideration in rtc and cmos ram battery backup applications). figure 2 shows a typical application circuit. the regulator is enabled any time the shutdown input (shdn ) is at or above v ih , and shutdown (disabled) when shdn is at or below v il . shdn may be controlled by a cmos logic gate, or i/o port of a microcontroller. if the shdn input is not required, it should be connected directly to the input supply. while in shutdown, supply current decreases to 0.05 m a (typical), v out falls to zero volts, and error is opencircuited. figure 2. typical application circuit ncp4555 ncp4586 v in gnd shdn battlow or reset v out error v out + c1 1 m f r1 1 m shutdown control (to cmos logic or tie to v in if unused) + 1 m f + c2 0.2 m f + battery c2 required only if error is used as a processor reset signal (see text) v + error open drain output error is driven low whenever v out falls out of regulation by more than 5.0% (typical). this condition may be caused by low input voltage, output current limiting, or thermal limiting. the error threshold is 5.0% below rated v out regardless of the programmed output voltage value (e.g. error = v ol at 4.75 v (typ.) for a 5.0 v regulator and 2.85 v (typ.) for a 3.0 v regulator). error output operation is shown in figure 3. note that error is active when v out falls to v th , and inactive when v out rises above v th by v hys . as shown in figure 2, error can be used as a battery low flag, or as a processor reset signal (with the addition of timing capacitor c2). r1 x c2 should be chosen to maintain error below v ih of the processor reset input for at least 200 msec to allow time for the system to stabilize. pullup resistor r1 can be tied to v out , v in or any other voltage less than (v in + 0.3 v).
ncp4555, ncp4586 http://onsemi.com 5 hystere sis (v hys ) error v out v th v ih v ol figure 3. error output operation output capacitor a 1.0 m f (min) capacitor from v out to ground is recommended. the output capacitor should have an effective series resistance of 5.0 w or less, and a resonant frequency above 1.0 mhz. a 1.0 m f capacitor should be connected from v in to gnd if there is more than 10 inches of wire between the regulator and the ac filter capacitor, or if a battery is used as the power source. aluminum electrolytic or tantalum capacitor types can be used. (since many aluminum electrolytic capacitors freeze at approximately 30 c, solid tantalums are recommended for applications operating below 25 c.) when operating from sources other than batteries, supplynoise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. thermal considerations thermal shutdown integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160 c. the regulator remains off until the die temperature drops to approximately 150 c. power dissipation the amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. the following equation is used to calculate worst case actual power dissipation: p d (v inmax v outmin )i loadmax p d worst case actual power dissipation where : v inmax maximum voltage on v in v outmin minimum regulator output voltage i loadmax maximum output (load) current (eq. 1) the maximum allowable power dissipation (equation 2) is a function of the maximum ambient temperature (t amax ), the maximum allowable die temperature (125 c), and the thermal resistance from junctiontoair ( ja ). the 5pin sot23 package has a ja of approximately 200 c/watt when mounted on a single layer fr4 dielectric copper clad pc board. p dmax (t jmax t amax ) ja where all terms are previously defined. (eq. 2) equation 1 can be used in conjunction with equation 2 to ensure regulator thermal operation is within limits. for example: v inmax 3.0 v 5.0% given : v outmin 2.7 v 2.5% i load 40 ma t amax 55 c find : 1. actual power dissipation. 2. maximum allowable dissipation. p d (v inmax v outmin )i loadmax actual power dissipation : [ (3.0 1.05) (2.7 .975) ] 40 10 3 20.7 mw p dmax (t jmax t amax ) ja maximum allowable power dissipation : (125 55) 318 mw 220 in this example, the ncp4555 dissipates a maximum of only 20.7 mw; far below the allowable limit of 318 mw. in a similar manner, equation 1 and equation 2 can be used to calculate maximum current and/or input voltage limits. layout considerations the primary path of heat conduction out of the package is via the package leads. therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower ja and, therefore, increase the maximum allowable power dissipation limit.
ncp4555, ncp4586 http://onsemi.com 6 typical characteristics (unless otherwise specified, all parts are measured at temperature = 25 c) dropout voltage (v) dropout voltage (v) dropout voltage (v) 90 80 60 70 50 40 0 0.080 0.060 0.090 0.050 0.070 0.000 0.100 0.150 40 0.016 20 0.010 0 20 dropout voltage (v) 0.000 temperature ( c) figure 4. dropout voltage vs. temperature (v out = 3.3 v) figure 5. dropout voltage vs. temperature (v out = 3.3 v) 0.200 0.180 0.160 0.140 0.120 0.100 0.080 0.060 0.000 figure 6. dropout voltage vs. temperature (v out = 3.3 v) temperature ( c) figure 7. dropout voltage vs. temperature (v out = 3.3 v) temperature ( c) figure 8. ground current vs. v in (v out = 3.3 v) v in (v) figure 9. ground current vs. v in (v out = 3.3 v) v in (v) gnd current ( m a) gnd current ( m a) 0.020 02 1.5 1 0.5 2.5 3 7.5 0.050 0.200 0.100 0.000 0.250 0.300 i load = 10 ma temperature ( c) 0.006 0.008 0.012 0.014 0.018 50 125 0.040 0.004 0.002 70 0.030 0.020 0.010 0.040 0.020 30 20 10 3.5 4 4.5 5 5.5 6 6.5 7 40 20 0 20 50 125 70 40 20 0 20 50 125 70 40 20 0 20 50 125 70 90 80 60 70 50 40 0 02 1.5 1 0.5 2.5 3 7.5 30 20 10 3.5 4 4.5 5 5.5 6 6.5 7 c in = 1 m f c out = 1 m f i load = 50 ma c in = 1 m f c out = 1 m f i load = 100 ma c in = 1 m f c out = 1 m f i load = 150 ma c in = 1 m f c out = 1 m f i load = 10 ma c in = 1 m f c out = 1 m f i load = 100 ma c in = 1 m f c out = 1 m f
ncp4555, ncp4586 http://onsemi.com 7 typical characteristics (unless otherwise specified, all parts are measured at temperature = 25 c) 01 0.5 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 3.290 3.288 3.284 3.286 3.282 3.278 3.280 4.995 4.985 5.000 4.990 5.005 5.010 5.015 5.020 5.025 2.5 1.5 3 1 2 0 3.5 3.305 0 60 7.5 50 1 0.5 gnd current ( m a) 30 v in (v) figure 10. ground current vs. v in (v out = 3.3 v) figure 11. v out vs. v in (v out = 3.3 v) v out (v) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 figure 12. v out vs. v in (v out = 3.3 v) v in (v) figure 13. output voltage vs. temperature (v out = 3.3 v) temperature ( c) v out (v) v out (v) figure 14. output voltage vs. temperature (v out = 3.3 v) temperature ( c) figure 15. output voltage vs. temperature (v out = 5 v) temperature ( c) v out (v) v out (v) 80 40 20 40 0 10 85 20 125 3.295 3.310 3.290 3.300 3.275 3.315 3.320 40 20 40 0 10 85 20 125 v in (v) 0 10 20 40 70 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 0 1 0.5 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 0.5 3.285 3.280 3.276 3.274 40 20 40 0 10 85 20 125 i load = 150 ma c in = 1 m f c out = 1 m f i load = 100 ma i load = 150 ma i load = 0 ma c in = 1 m f c out = 1 m f c in = 1 m f c out = 1 m f i load = 10 ma c in = 1 m f c out = 1 m f v in = 4.3 v c in = 1 m f c out = 1 m f v in = 4.3 v i load = 10 ma v in = 6 v c out = 1 m f c in = 1 m f
ncp4555, ncp4586 http://onsemi.com 8 typical characteristics (unless otherwise specified, all parts are measured at temperature = 25 c) 70 60 50 40 30 20 10 0 80 70 60 50 40 30 20 10 0 40 20 40 0 10 85 20 125 1000 10 100 0.1 0.01 65 75 60 70 80 55 50 40 35 30 4.994 v out (v) temperature ( c) figure 16. output voltage vs. temperature (v out = 5 v) figure 17. temperature vs. quiescent current (v out = 5 v) figure 18. temperature vs. quiescent current (v out = 5 v) temperature ( c) figure 19. output noise vs. frequency frequency (hz) noise ( m v/ hz) gnd current ( m a) figure 20. stability region vs. load current load current (ma) figure 21. power supply rejection ratio frequency (hz) c out esr ( w ) psrr (db) 040 30 20 10 50 60 100 stable region temperature ( c) 40 20 40 0 10 85 20 125 40 20 40 0 10 85 20 125 0.01 k 100 k 10 k 1 k 0.1 k 1000 k 4.992 4.990 4.988 4.986 4.984 4.982 4.980 4.978 4.976 4.974 1.0 0.1 0.0 10.0 i load = 10 ma i load = 150 ma v in = 6 v c out = 1 m f c in = 1 m f i load = 150 ma v in = 6 v c out = 1 m f c in = 1 m f r load = 50 w c out = 1 m f c in = 1 m f 1 70 80 90 c out = 1 m f to 10 m f 45 0.01 k 100 k 10 k 1 k 0.1 k 1000 k i out = 10 ma v indc = 4 v v inac = 100 mv pp v out = 3 v c in = 0 c out = 1 m f gnd current ( m a) v in = 6 v c out = 1 m f c in = 1 m f
ncp4555, ncp4586 http://onsemi.com 9 figure 22. measure rise time of 3.3 v ldo conditions: c in = 1 m f, c out = 1 m f, i load = 100 ma, v in = 4.3 v, temp = 25 c, rise time = 184 m s conditions: c in = 1 m f, c out = 1 m f, i load = 100 ma v in = 6 v, temp = 25 c, rise time = 192 m s figure 23. measure rise time of 5.0 v ldo figure 24. measure fall time of 3.3 v ldo conditions: c in = 1 m f, c out = 1 m f, i load = 100 ma v in = 4.3 v, temp = 25 c, fall time = 52 m s conditions: c in = 1 m f, c out = 1 m f, i load = 100 ma v in = 6 v, temp = 25 c, fall time = 88 m s figure 25. measure fall time of 5.0 v ldo
ncp4555, ncp4586 http://onsemi.com 10 conditions: v in = 6 v, c in = 0 m f, c out = 1 m f figure 26. thermal shutdown response of 5.0 v ldo i load was increased until temperature of die reached about 160 c, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160 c. the regulator remains off until die temperature drops to approximately 150 c. w device marking device marking pin 1 user direction of feed component taping orientation for 5pin sot23 devices standard reel component orientation tr suffix device (mark right side up) sot23 package carrier width (w) pitch (p) part per full reel reel size 8 mm 4 mm 3000 7 inches carrier tape, number of components per reel and reel size reverse reel component orientation rt suffix device (mark upside down) pin 1 user direction of feed p
ncp4555, ncp4586 http://onsemi.com 11 and = two letter part number codes + temperature range and voltage = year and quarter code = lot id number marking diagram 12 3 4 12 3 4 ordering information device voltage option* marking and 2 1 package junction temperature range shipping ncp4555snxxt1 1.8 2.8 2.85 3.0 3.3 dy dz d8 d3 d5 ncp4586snxxt1 2.5 2.7 2.8 2.85 3.0 3.3 3.6 4.0 5.0 p1 p2 pz p8 p3 p5 p9 p0 p7 sot23 40 c to + 125 c 3000 tape & reel xx indicates output voltages *other output voltages are available. please contact on semiconductor for details.
ncp4555, ncp4586 http://onsemi.com 12 package dimensions sot23 sn suffix case 121201 issue o dim min max millimeters a1 0.00 0.10 a2 1.00 1.30 b 0.30 0.50 c 0.10 0.25 d 2.80 3.00 e 2.50 3.10 e1 1.50 1.80 e 0.95 bsc e1 1.90 bsc l l1 0.45 0.75 notes: 1. dimensions are in millimeters. 2. interpret dimensions and tolerances per asme y14.5m, 1994. 3. datum c is a seating plane. a 1 5 23 4 d e1 b l1 e e e1 c m 0.10 c s b s a b 5x a2 a1 s 0.05 c l 0.20 --- on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ncp4555/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland

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